Observation of Velocity Overshoot in Silicon Inversion Layers

Fariborz Assaderaghi, Ping Keung Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

Original languageEnglish
Pages (from-to)484-486
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Jan 1993

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