Observation of Velocity Overshoot in Silicon Inversion Layers

Fariborz Assaderaghi; Ping Keung Ko; Chen-Ming Hu

doi:10.1109/55.244738

Observation of Velocity Overshoot in Silicon Inversion Layers

Fariborz Assaderaghi, Ping Keung Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

Original language	English
Pages (from-to)	484-486
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	10
DOIs	https://doi.org/10.1109/55.244738
State	Published - 1 Jan 1993

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@article{c873f0e9d88445d0a831d626a27be4c3,

title = "Observation of Velocity Overshoot in Silicon Inversion Layers",

abstract = "Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.",

author = "Fariborz Assaderaghi and Ko, {Ping Keung} and Chen-Ming Hu",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/55.244738",

language = "English",

volume = "14",

pages = "484--486",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Observation of Velocity Overshoot in Silicon Inversion Layers

AU - Assaderaghi, Fariborz

AU - Ko, Ping Keung

AU - Hu, Chen-Ming

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

AB - Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

UR - http://www.scopus.com/inward/record.url?scp=0027678066&partnerID=8YFLogxK

U2 - 10.1109/55.244738

DO - 10.1109/55.244738

M3 - Article

AN - SCOPUS:0027678066

VL - 14

SP - 484

EP - 486

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

ER -

Observation of Velocity Overshoot in Silicon Inversion Layers

Abstract

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