Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Sheng-Di Lin; V. V. Ilchenko; V. V. Marin; N. V. Shkil; A. A. Buyanin; K. Y. Panarin; O. V. Tretyak

doi:10.1063/1.2752737

Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Sheng-Di Lin^*, V. V. Ilchenko, V. V. Marin, N. V. Shkil, A. A. Buyanin, K. Y. Panarin, O. V. Tretyak

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.

Original language	English
Article number	263114
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2752737
State	Published - 2 Aug 2007

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title = "Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature",

abstract = "The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.",

author = "Sheng-Di Lin and Ilchenko, {V. V.} and Marin, {V. V.} and Shkil, {N. V.} and Buyanin, {A. A.} and Panarin, {K. Y.} and Tretyak, {O. V.}",

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AU - Marin, V. V.

AU - Shkil, N. V.

AU - Buyanin, A. A.

AU - Panarin, K. Y.

AU - Tretyak, O. V.

PY - 2007/8/2

Y1 - 2007/8/2

N2 - The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.

AB - The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.

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Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Abstract

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