Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Sheng-Di Lin*, V. V. Ilchenko, V. V. Marin, N. V. Shkil, A. A. Buyanin, K. Y. Panarin, O. V. Tretyak

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.

Original languageEnglish
Article number263114
JournalApplied Physics Letters
Volume90
Issue number26
DOIs
StatePublished - 2 Aug 2007

Fingerprint Dive into the research topics of 'Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature'. Together they form a unique fingerprint.

Cite this