Abstract
The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.
Original language | English |
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Article number | 263114 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 26 |
DOIs | |
State | Published - 2 Aug 2007 |