Observation of strong electron dephasing in highly disordered Cu93Ge4Au3 thin films

S. M. Huang*, T. C. Lee, H. Akimoto, K. Kono, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We report the observation of strong electron dephasing in a series of disordered Cu93Ge4Au3 thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln T-dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.

Original languageEnglish
Article number046601
Number of pages4
JournalPhysical Review Letters
Volume99
Issue number4
DOIs
StatePublished - 26 Jul 2007

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