Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

J. L. Shen*, Y. C. Lee, G. W. Shu, Wu-Ching Chou, W. Y. Uen

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

6 Scopus citations

Abstract

We report the first observation of persistent photoconductivity (PPC) in In1-xGaxAsyP1-y epilayers. The decay behaviour of PPC is similar to that in AlxGa1-xAs and can be well described by a stretch-exponential function. The origin of PPC is discussed in terms of several models. Under the excitation-energy, temperature and alloy-composition dependence of the PPC effects, it is found the lattice relaxation of DX-like impurity is responsible for PPC in In1-xGaxAsyP1-y. Our results indicate that PPC in In1-xGaxAsyP1-y has a similar origin as that in AlxGa1-xAs. However, the decay-time constant and electron-capture barrier in In1-xGaxAsyP1-y are about 11 orders of magnitude and 46% smaller than those in AlxGa1-xAs, respectively.

Original languageEnglish
JournalSemiconductor Science and Technology
Volume17
Issue number11
DOIs
StatePublished - 1 Nov 2002

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