Observation of pendellösung fringes in reflection-section topographs of bent silicon crystals

H. D. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Pendellösung fringes have been observed in reflection-section topographs of bent silicon single crystals. The number of fringes increases while the separation distances between fringes decrease with decreasing radius of curvature. Excessive bending of the lattice planes adjacent to a dislocation produces finer fringes. These fringes may be employed as a means to detect minute lattice strains.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalMaterials Letters
Volume4
Issue number2
DOIs
StatePublished - 1 Jan 1986

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