Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics

Bing-Yue Tsui; Po Hsueh Li; Chih Chan Yen

doi:10.1109/LED.2011.2165521

Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics

Bing-Yue Tsui^*, Po Hsueh Li, Chih Chan Yen

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al₂ O ₃ are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO₂. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

Original language	English
Article number	6026902
Pages (from-to)	1594-1596
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2165521
State	Published - 1 Nov 2011

Keywords

Border traps
Extreme ultraviolet (EUV)
High-dielectric-constant dielectrics
Hole traps
Interface states

Access to Document

10.1109/LED.2011.2165521

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics'. Together they form a unique fingerprint.

Cite this

@article{7092823e639240399753bcbd01ca9eb9,

title = "Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics",

abstract = "Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO2. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.",

keywords = "Border traps, Extreme ultraviolet (EUV), High-dielectric-constant dielectrics, Hole traps, Interface states",

author = "Bing-Yue Tsui and Li, {Po Hsueh} and Yen, {Chih Chan}",

year = "2011",

month = nov,

day = "1",

doi = "10.1109/LED.2011.2165521",

language = "English",

volume = "32",

pages = "1594--1596",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics

AU - Tsui, Bing-Yue

AU - Li, Po Hsueh

AU - Yen, Chih Chan

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO2. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

AB - Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO2. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

KW - Border traps

KW - Extreme ultraviolet (EUV)

KW - High-dielectric-constant dielectrics

KW - Hole traps

KW - Interface states

UR - http://www.scopus.com/inward/record.url?scp=80055009338&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2165521

DO - 10.1109/LED.2011.2165521

M3 - Article

AN - SCOPUS:80055009338

VL - 32

SP - 1594

EP - 1596

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 6026902

ER -