Observation of extreme-ultraviolet-irradiation-induced damages on high-dielectric-constant dielectrics

Bing-Yue Tsui*, Po Hsueh Li, Chih Chan Yen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO2. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

Original languageEnglish
Article number6026902
Pages (from-to)1594-1596
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - 1 Nov 2011


  • Border traps
  • Extreme ultraviolet (EUV)
  • High-dielectric-constant dielectrics
  • Hole traps
  • Interface states

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