Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors

J. Zhao*, G. P. Li, K. Y. Liao, M. R. Chin, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Electromigration of hydrogen inside polycrystalline silicon (polysilicon) has been observed for the first time. Experiments were conducted on polysilicon emitter (poly emitter) n-p-n transistors with and without atomic hydrogen inside polysilicon. The current gain (β) of n-p-n was selected to monitor electromigration of hydrogen during current stress because of its high sensitivity to hydrogen passivation of dangling bonds. The major characteristics of hydrogen electromigration are shown in this letter.

Original languageEnglish
Pages (from-to)2950-2952
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number23
DOIs
StatePublished - 1993

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