Observation of differential capacitance images on slightly iron-contaminated p-type silicon

M. N. Chang*, C. Y. Chen, Fu-Ming Pan, T. Y. Chang, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Scanning capacitance microscopy (SCM) is employed to study defect distribution induced by iron contamination on p-type silicon wafers. For slightly contaminated samples, SCM reveals that iron contamination induces interface traps in the defect region. Interface traps perturb significantly the depletion behavior of the silicon surface. Iron contamination also decreases the lifetime and increases the density of minority carriers in the defect region. The defects induced by iron contamination exhibit an obvious bias-dependent SCM contrast. By differential capacitance images, one can examine the defect density distribution. The influence of these microscale defects on the electrical characteristics of the metal oxide semiconductor (MOS) capacitor cannot be observed by conventional capacitance-voltage measurement.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number8
DOIs
StatePublished - 1 Aug 2002

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