Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature

Jenn-Fang Chen*, J. S. Wang, P. Y. Wang, H. Z. Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea=0.45±0.02eV, σ=6±4 × 10-17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers.

Original languageEnglish
Pages (from-to)1092-1094
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number8
DOIs
StatePublished - 23 Aug 1999

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