Observation of a Dominant EL2-Iike Mid-Gap Trap in In0.12Ga0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy

Jenn-Fang Chen*, Pie Yong Wang, Jiin Shung Wang, Hong Zheng Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10-11 cm2 and Ea = 0.75 eV, a = 3.7 × 10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.

Original languageEnglish
Pages (from-to)6421-6422
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number11
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Deep levels
  • IngaAs/GaAs superlattice
  • Low-temperature MBE growth

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