Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10-11 cm2 and Ea = 0.75 eV, a = 3.7 × 10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 1 Dec 1999|
- Deep levels
- IngaAs/GaAs superlattice
- Low-temperature MBE growth