Numerical study on doping and positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Po Ching Wu, Shun Chieh Hsu, Yun Han Jhen, Yao Zhong Dong, Yan Zhang Ling, Lung Hsing Hsu, Hao-Chung Kuo, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we demonstrate the doping concentration and positioning effect of the type-II quantum well (QR) on the solar cell performances in terms of numerical simulation. The variation in doping concentration and location can affect the band diagram seriously and possibly form the back surface field which can either facilitate or deteriorate the carrier collection. A wide range of parameters are calculated to reveal this trend and the previous experimental results are also discussed.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2115-2117
Number of pages3
ISBN (Electronic)9781509027248
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period5/06/1610/06/16

Keywords

  • Concentrated sunlight operations
  • GaAs
  • GaSb
  • Quantum rings
  • solar cells
  • Type-II heterojunction

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