Numerical study of surface-dependent performances of nano-scale solar cells

Shih Li Lin, Hung Ruei Tseng, Shun Chieh Hsu, Yin Han Chen, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

Keywords

  • Fermi-Level Pinning
  • Gallium Arsenide
  • Metal-Semiconductor Contact
  • Numerical method
  • Photovoltaic Devices
  • Surface Recombination Velocity

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    Lin, S. L., Tseng, H. R., Hsu, S. C., Chen, Y. H., & Lin, C-C. (2015). Numerical study of surface-dependent performances of nano-scale solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356113] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356113