Numerical study of quantum-dot-embedded solar cells

Chien-Chung Lin, Ming Hsuan Tan, Che Pin Tsai, Kuei Ya Chuang, T. S. Lay

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

A quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.

Original languageEnglish
Article number6425400
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume19
Issue number5
DOIs
StatePublished - 22 May 2013

Keywords

  • Intermediate band solar cell (IBSC)
  • photovoltaic cells
  • quantum dot
  • simulation
  • tandem cell
  • transmission matrix method

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