Numerical study of GaAs-based dual junction intermediate band solar cells

Ching Yu Shih*, Ming Hsuan Tan, Lung Hsing Hsu, Che Pin Tsai, Chien-Chung Lin, Hao-Chung Kuo, K. Y. Chuang, T. S. Lay

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using Matlab® coding and commercial software Silvaco®. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1917-1921
Number of pages5
DOIs
StatePublished - 26 Nov 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period3/06/128/06/12

Keywords

  • dual-junction solar cell
  • photovoltaic cells
  • quantum-dot solar cells
  • simulation

Fingerprint Dive into the research topics of 'Numerical study of GaAs-based dual junction intermediate band solar cells'. Together they form a unique fingerprint.

Cite this