Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

Yen Kuang Kuo; Bing Cheng Lin; Jih Yuan Chang; Fang Ming Chen; Hao-Chung Kuo

doi:10.1109/LPT.2012.2192723

Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

Yen Kuang Kuo^*, Bing Cheng Lin, Jih Yuan Chang, Fang Ming Chen, Hao-Chung Kuo

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

Original language	English
Article number	6177221
Pages (from-to)	1039-1041
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2012.2192723
State	Published - 22 May 2012

Keywords

Grading layer
InGaN
solar cell

Access to Document

10.1109/LPT.2012.2192723

Fingerprint Dive into the research topics of 'Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration'. Together they form a unique fingerprint.

Cite this

@article{067f71ed0fb7452f8825e9ec69fe6bcd,

title = "Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration",

abstract = "The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.",

keywords = "Grading layer, InGaN, solar cell",

author = "Kuo, {Yen Kuang} and Lin, {Bing Cheng} and Chang, {Jih Yuan} and Chen, {Fang Ming} and Hao-Chung Kuo",

year = "2012",

month = may,

day = "22",

doi = "10.1109/LPT.2012.2192723",

language = "English",

volume = "24",

pages = "1039--1041",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

AU - Kuo, Yen Kuang

AU - Lin, Bing Cheng

AU - Chang, Jih Yuan

AU - Chen, Fang Ming

AU - Kuo, Hao-Chung

PY - 2012/5/22

Y1 - 2012/5/22

N2 - The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

AB - The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

KW - Grading layer

KW - InGaN

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=84861174234&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2192723

DO - 10.1109/LPT.2012.2192723

M3 - Article

AN - SCOPUS:84861174234

VL - 24

SP - 1039

EP - 1041

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 12

M1 - 6177221

ER -

Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

Abstract

Keywords

Access to Document

Other files and links

Cite this