Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

Yen Kuang Kuo*, Bing Cheng Lin, Jih Yuan Chang, Fang Ming Chen, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

Original languageEnglish
Article number6177221
Pages (from-to)1039-1041
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number12
DOIs
StatePublished - 22 May 2012

Keywords

  • Grading layer
  • InGaN
  • solar cell

Fingerprint Dive into the research topics of 'Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration'. Together they form a unique fingerprint.

Cite this