Numerical simulation of thermal conductivity of SiNW-SiGe0.3 composite for thermoelectric applications

Ming Yi Lee, Yi-Ming Li*, Min Hui Chuang, Daisuke Ohori, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The electron band structure and phonon energy dispersion of the silicon nanowires (SiNWs) embedded in SiGe0.3 (SiNW-SiGe0.3 composite) are simulated by using the effective mass Schrödinger equation and the elastodynamic wave equation, respectively. Then, the TE properties of the SiNW-SiGe0.3 composite are investigated by the Landauer approach. The simulation shows the contribution from electrons/holes on both electrical conductance and thermal conductance increases few times by introducing SiNWs, but on the other hand, lattice thermal conductance reduces around two orders. These results are consistent with the experimental measurement and indicates that much lower lattice thermal conductance dominates the TE performance of the SiNW-SiGe0.3 composite.

Original languageEnglish
Article number9050665
Pages (from-to)2088-2092
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - May 2020


  • Landauer approach
  • silicon nanowire (SiNW)
  • thermal conductivity

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