Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistors

Yiming Li*, Chih Hong Hwang, Shao Ming Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We in this paper for the first time explore the static noise margin (SNM) of a six-transistor (6T) static random access memory (SRAM) cell with nanoscale silicon-on-insulator (SOI) fin-typed field effect transistors (FinFETs). The SNM is calculated with respect to the supply voltage, operating temperature, and cell ratio by performing a three-dimensional mixed-mode simulation. To include the quantum mechanical effect, the density-gradient equation is simultaneously solved in the coupled device and circuit equations. The standard deviation ((TSANM) of SNM versus device's channel length is computed, based upon the design of experiment and response surface methodology. Compared with the result of SNM for SRAM with 32nm planar metal-oxide-semiconductor field effect transistors, SRAM with SOI FinFETs quantitatively exhibits higher SNM and lower CTSNM- Improvement of characteristics resulting from good channel controllability implies that SRAM cells fabricated with FinFETs continuously maintains cell stability in sub-32nm technology nodes.

Original languageEnglish
Title of host publicationComputational Science - ICCS 2007 - 7th International Conference, Proceedings
PublisherSpringer Verlag
Pages227-234
Number of pages8
EditionPART 4
ISBN (Print)9783540725893
DOIs
StatePublished - 2007
Event7th International Conference on Computational Science, ICCS 2007 - Beijing, China
Duration: 27 May 200730 May 2007

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
NumberPART 4
Volume4490 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Conference

Conference7th International Conference on Computational Science, ICCS 2007
CountryChina
CityBeijing
Period27/05/0730/05/07

Keywords

  • Computational statistics
  • FinFET
  • Modeling and simulation
  • SRAM

Fingerprint Dive into the research topics of 'Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistors'. Together they form a unique fingerprint.

Cite this