Numerical simulation of self-heating InGaP/GaAs heterojunction bipolar transistors

Yiming Li*, Kuen Yu Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We numerically simulate effects of the self-heating on the current-voltage characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs). A set of coupled nonlinear ordinary differential equations (ODEs) of the equivalent circuit of HBT is formed and solved numerically in the large-signal time domain. We decouple the corresponding ODEs using the waveform relaxation method and solve them with the monotone iterative method. The temperature-dependent energy band gap, the current gain, the saturation current, and the thermal conductivity are considered in the model formulation. The power-added efficiency and the 1-dB compression point of a three-finger HBT are calculated. This approach successfully explores the self-heating and the thermal coupling phenomena of the three-finger transistors under high power and high frequency conditions. The numerical algorithm reported here can be incorporated into electronic computer-aided design software to simulate ultra-large scale integrated and radio frequency circuits.

Original languageEnglish
Pages (from-to)292-299
Number of pages8
JournalLecture Notes in Computer Science
Volume3516
Issue numberIII
DOIs
StatePublished - 2005
Event5th International Conference on Computational Science - ICCS 2005 - Atlanta, GA, United States
Duration: 22 May 200525 May 2005

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