Numerical simulation of programming transient behavior in charge trapping storage memory

C. H. Lee, C. W. Wu, S. W. Lin, T. H. Yeh, S. H. Gu, K. F. Chen, Y. J. Chen, J. Y. Hsieh, I. J. Huang, N. K. Zous, T. T. Han, M. S. Chen, W. P. Lu, Ta-Hui Wang, C. Y. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

This work aims to develop an accurate programming transient model for a SONOS type memory cell. By considering (i) the current tunneling through bottom oxide from substrate, (ii) the capture/emission efficiency in nitride, and (iii) the out tunneling probability from top dielectric, an excellent consistency between experiments and simulations is observed across various programming voltages. The programming behavior under various combinations of storage materials and blocking layers are also well demonstrated by incorporating the band-gap difference. Finally, the penalty of widened programming VT distribution due to the thinning down of tunneling oxide is examined and clarified.

Original languageEnglish
Title of host publication2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD
Pages109-110
Number of pages2
DOIs
StatePublished - 1 Sep 2008
Event2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD - Opio, France
Duration: 18 May 200822 May 2008

Publication series

Name2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Conference

Conference2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD
CountryFrance
CityOpio
Period18/05/0822/05/08

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    Lee, C. H., Wu, C. W., Lin, S. W., Yeh, T. H., Gu, S. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Wang, T-H., & Lu, C. Y. (2008). Numerical simulation of programming transient behavior in charge trapping storage memory. In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD (pp. 109-110). [4531838] (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD). https://doi.org/10.1109/NVSMW.2008.38