Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell

Ming Yi Lee, Yi Chia Tsai, Yi-ming Li, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages361-364
Number of pages4
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

Fingerprint Dive into the research topics of 'Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell'. Together they form a unique fingerprint.

  • Cite this

    Lee, M. Y., Tsai, Y. C., Li, Y., & Samukawa, S. (2016). Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 361-364). [7751551] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751551