Numerical simulation of nanoscale multiple-gate devices including random impurity effect

Chih Hong Hwang*, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a statistically sound "atomistic" approach for analyzing random impurity effect in nanoscale device is presented. The quantum confinement aspects associated with the coulomb potential wells of individual impurities are treated using the density gradient approach applied to the channel carriers in a hydrodynamic framework. The statistically generated large-scale doping profiles are similar to the physical process of ion implantation and the number of impurities inside channel follows normal distribution. Discrete dopants are statistically positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Our preliminary study extensively examines the threshold voltage fluctuations of various device structures, single-, multiple-, nanowire surrounding- and nanowire omega-gate. The presented approach is cost-effective in fluctuation analysis.

Original languageEnglish
Title of host publicationComputation in Modern Science and Engineering - Proceedings of the International Conference on Computational Methods in Science and Engineering 2007 (ICCMSE 2007)
Pages1001-1004
Number of pages4
Edition2
DOIs
StatePublished - 2007
EventInternational Conference on Computational Methods in Science and Engineering 2007, ICCMSE 2007 - Corfu, Greece
Duration: 25 Sep 200730 Sep 2007

Publication series

NameAIP Conference Proceedings
Number2
Volume963
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceInternational Conference on Computational Methods in Science and Engineering 2007, ICCMSE 2007
CountryGreece
CityCorfu
Period25/09/0730/09/07

Keywords

  • "Atomistic" approach
  • 3D model
  • Fluctuation
  • Nanoscale device
  • Numerical simulation
  • Random impurity

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  • Cite this

    Hwang, C. H., & Li, Y. (2007). Numerical simulation of nanoscale multiple-gate devices including random impurity effect. In Computation in Modern Science and Engineering - Proceedings of the International Conference on Computational Methods in Science and Engineering 2007 (ICCMSE 2007) (2 ed., pp. 1001-1004). (AIP Conference Proceedings; Vol. 963, No. 2). https://doi.org/10.1063/1.2835907