Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

Yiming Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this paper, electrical characteristics of 25 nm strained fin-typed field effect transistors (FinFETs) with oxide-nitride-stacked-capping layer are numerically studied. The FinFETs are fabricated on two different wafers, one is bulk silicon and the other is silicon-on-insulator (SOI) substrate. A three-dimensional device simulation is performed by solving a set of density-gradient-hydrodynamic equations to study device performance including, such as the drain current characteristics (the ID -VG and ID-VD curves), the drain-induced barrier height lowering, and the subthreshold swing. Comparison between the strained bulk and SOI FinFETs shows that the strained bulk FinFET is promising for emerging multiple-gate nanodevice era according to the manufacturability point of view.

Original languageEnglish
Pages (from-to)371-376
Number of pages6
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 2006

Keywords

  • Device simulation
  • Drain current
  • Drain-induced barrier height lowering
  • Electrical characteristics
  • Strained bulk FinFET
  • Strained SOI FinFET
  • Subthreshold swing

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