Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

Fang Ming Chen*, Jih Yuan Chang, Yen Kuang Kuo, Bing Cheng Lin, Hao-Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
PublisherSPIE
ISBN (Electronic)9781628414530
DOIs
StatePublished - 1 Jan 2015
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9363
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco
Period9/02/1512/02/15

Keywords

  • electron blocking layer
  • polarization
  • ultraviolet light-emitting diodes

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