Nucleation and growth of epitaxial silicide in nanowire of silicon

Yi-Chia Chou*, Kuo Chang Lu, King-Ning Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi2 in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages22-23
Number of pages2
DOIs
StatePublished - 5 May 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period3/01/108/01/10

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