Nucleation and growth of {113} defects and {111} dislocation loops in silicon-implanted silicon

G. Z. Pan*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Plan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 3.6×1014 Si/cm2, 8.0 mA and annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the 〈110〉 direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the 〈110〉 directions inclined to the implantation surface.

Original languageEnglish
Pages (from-to)431-436
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume469
DOIs
StatePublished - 1 Dec 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1 Apr 19974 Apr 1997

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