N++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts

Romualdo A. Ferreyra*, Asamira Suzuki, Tomohiro Kazumoto, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Non-alloy ohmic contacts were implemented based on the heavily germanium-doped GaN regrown layer by using the pico-second laser ablation technique for the first time. Owing to the enhanced surface diffusion of the ablated high-energy atoms, smoothly refilled epitaxial layers were achieved in the AlGaN/GaN recess regions. Selective growth was successfully carried out by using hydrogen silsesquioxane (HSQ) film. Contact resistance of ∼0.17 Ω · mm with a specific contact resistance in the order of ∼ 10-7 Ω · cm2 was obtained by using non-alloy Hf/Al/Ti metal stacks.

Original languageEnglish
Article number7964732
Pages (from-to)1079-1081
Number of pages3
JournalIEEE Electron Device Letters
Volume38
Issue number8
DOIs
StatePublished - 1 Aug 2017

Keywords

  • GaN regrowth
  • n-type GaN
  • non-alloy ohmic contacts
  • power devices

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