Novel UV baking process to improve DUV photoresist hardness

C. S. Huang*, Bing-Yue Tsui, H. H. Shieh, Robert Mohondro

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A new baking gas using mixture of NH3 and N2 gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist, better CD control and profile process can be reached in the high density plasma (HDP) dry etchers for the applications of 0.2 um contact hole with aspect-ratio greater than 5 and for 0.22 um aluminum metal line with aspect-ratio of 2.5.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 7 Jun 199910 Jun 1999

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