A new baking gas using mixture of NH3 and N2 gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist, better CD control and profile process can be reached in the high density plasma (HDP) dry etchers for the applications of 0.2 um contact hole with aspect-ratio greater than 5 and for 0.22 um aluminum metal line with aspect-ratio of 2.5.
|Number of pages||4|
|Journal||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|State||Published - 1 Jan 1999|
|Event||Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 7 Jun 1999 → 10 Jun 1999