Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung, Y. H. Tseng, C. S. Lai, Y. Hsu, Eric Ho, Terry Chen, L. C. Peng, C. H. Chu

Research output: Contribution to journalConference article

17 Scopus citations

Abstract

A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

Original languageEnglish
Article number4418972
Pages (from-to)457-460
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

Fingerprint Dive into the research topics of 'Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention'. Together they form a unique fingerprint.

  • Cite this