Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

76 Scopus citations

Abstract

We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages85-86
Number of pages2
DOIs
StatePublished - 19 Oct 2010
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 15 Jun 201017 Jun 2010

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period15/06/1017/06/10

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