Novel two-bit-per-cell resistive-switching memory for low-cost embedded applications

Shih Chieh Wu, Chieh Lo, Tuo-Hung Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A novel two-bit-per-cell embedded nonvolatile memory (NVM) device requiring no additional mask and process modification in a logic technology has been proposed using a low-temperature poly-Si thin-film transistor with a HfO-{2}/\hbox{Ni} gate stack. The feature of two-bit-per-cell is realized by independent localized resistive switching (RS) at the drain and source bits, respectively, and enables increased bit density over the present single-poly NVM for low-cost embedded applications. Furthermore, minimal degradation of the transistor characteristics after RS allows interchangeable logic/memory operations in an identical device.

Original languageEnglish
Article number6053999
Pages (from-to)1662-1664
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
StatePublished - 1 Dec 2011

Keywords

  • Embedded nonvolatile memory (NVM)
  • Resistive switching (RS)
  • Resistive-switching random access memory (RRAM)
  • Two-bit-per-cell

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