Abstract
A new process for thin titanium self-aligned silicide (Ti-SALICIDE) on narrow n+poly-Si lines and n+ diffusion layers using pre-amorphization implantation (PAI) with heavy ions of antimony (Sb) and germanium (Ge) has been demonstrated for application to 0.2 μm CMOS device and beyond. Pre-amorphization enhances the phase transformation from C49 TixSix to C54 TiSi2 and lowers the transformation temperature by 80 °C so that it occurs before conglomeration in narrow lines. The sheet resistance of TiSi2 on heavily As doped poly-Si lines are 3.7 Ω/□ and 3.8 Ω/□ for the samples pre-amorphized by Ge and Sb implantations even with line width down to 0.2 μm. There is less leakage in Ti-SALICIDE diode with pre-amorphization than without it. The probable reasons and mechanisms are discussed.
Original language | English |
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Pages | 47-51 |
Number of pages | 5 |
State | Published - 1 Dec 1998 |
Event | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998 |
Conference
Conference | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
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City | Beijing, China |
Period | 21/10/98 → 23/10/98 |