A new process for thin titanium self-aligned silicide (Ti-SALICIDE) on narrow n+poly-Si lines and n+ diffusion layers using pre-amorphization implantation (PAI) with heavy ions of antimony (Sb) and germanium (Ge) has been demonstrated for application to 0.2 μm CMOS device and beyond. Pre-amorphization enhances the phase transformation from C49 TixSix to C54 TiSi2 and lowers the transformation temperature by 80 °C so that it occurs before conglomeration in narrow lines. The sheet resistance of TiSi2 on heavily As doped poly-Si lines are 3.7 Ω/□ and 3.8 Ω/□ for the samples pre-amorphized by Ge and Sb implantations even with line width down to 0.2 μm. There is less leakage in Ti-SALICIDE diode with pre-amorphization than without it. The probable reasons and mechanisms are discussed.
|Number of pages||5|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China|
Duration: 21 Oct 1998 → 23 Oct 1998
|Conference||Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology|
|Period||21/10/98 → 23/10/98|