Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

Yi Hong Wu*, Po Yi Kuo, Yi Hsien Lu, Yi Hsuan Chen, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/Vċs), and large on/off-current ratio of more than 109(IOFF = 4×10-14\ ION=7×10-5 and W mask/Lmask =\break \hbox10μm/3μm).

Original languageEnglish
Article number5559329
Pages (from-to)1233-1235
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
StatePublished - 1 Nov 2010

Keywords

  • Ni-salicided
  • polycrystalline silicon thin-film transistors (poly-Si TFTs)
  • symmetric S/D
  • vertical channel

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