Novel surface conduction electron emitter (SCE ) nanogaps for field emission displays

Chih Hao Tsai*, Fu-Ming Pan, Hsiang Yu Lo, Yiming Li, Yi Ting Kuo, Hsueh Yung Chao, Kuo Chung Lo, Mei Tsao Jiang, Chi Neng Mo

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A novel nanometer scaled gap in palladium thin film strip was prepared by hydrogen absorption under high pressure conditions, and implemented in the fabrication of the surface conduction electron emitter (SCE ) for flat panel display applications. The lattice constant increase in the Pd due to the phase transformation from the α-phase to the β-phase after hydrogen absorption, a large compressive stress occurred to the Pd thin film. With a proper geometric arrangement of the Pd/Pt/Ti emitter electrode of the SCE structure, a single nanogap per SCE device was prepared. Finite element analysis was carried out to study the hydrostatic stress distribution in the thin film emitter structure after Pd hydrogenation, and thereby the optimized thickness of thin film electrodes of the emitter was determined for the nanogap fabrication. The novel SCE emitter had an inclined protrusion structure on the cathode, which greatly enhance the local electrical field and improve electron beam focusing. The experimental measurement and theoretical analysis show that field emission properties of the novel SCE are superior to conventional SCE with the coplanar cathode.

Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number1
DOIs
StatePublished - 1 Jan 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 20 May 200821 May 2008

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