Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu-Hsiang Ko, Wen Luh Yang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1228-1229
Number of pages2
DOIs
StatePublished - 5 May 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period3/01/108/01/10

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