Novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits

Mansun Chan*, Samuel K H Fung, Chen-Ming Hu, Ping K. Ko

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A novel SOI CBiCMOS compatible structure has been developed which can be operated as both MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effect such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.

Original languageEnglish
Pages40-43
Number of pages4
StatePublished - 1 Dec 1995
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 6 Nov 199510 Nov 1995

Conference

ConferenceProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period6/11/9510/11/95

Fingerprint Dive into the research topics of 'Novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits'. Together they form a unique fingerprint.

Cite this