A novel SOI CBiCMOS compatible structure has been developed which can be operated as both MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effect such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.
|Number of pages||4|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong|
Duration: 6 Nov 1995 → 10 Nov 1995
|Conference||Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95|
|City||Hong Kong, Hong Kong|
|Period||6/11/95 → 10/11/95|