A novel small-dimension ply-Si TFT with ultrathin channel (300 A) and W-raised source/drain is proposed. The kink effect is effectively suppressed ue to the reduced channel thickness. Tungsten film selectively grown on the source/drain region greatly improves the sheet resistance as well as increases the drain current. Furthermore, the W filf is selectively deposited under low temperature (300 C). The process is imple and compatible with conventional low-temperature poly-Si (LTPS) process. Characteristics of devices with different channel thicknesses and dimensions sare also studied, revealing that new devices with ultrathin channel are free from the floating body effect.