Novel small-dimension Poly-Si TFTs with improved driving current and suppressed short channel effects

Hsiao-Wen Zan*, Chun Yen Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel small-dimension ply-Si TFT with ultrathin channel (300 A) and W-raised source/drain is proposed. The kink effect is effectively suppressed ue to the reduced channel thickness. Tungsten film selectively grown on the source/drain region greatly improves the sheet resistance as well as increases the drain current. Furthermore, the W filf is selectively deposited under low temperature (300 C). The process is imple and compatible with conventional low-temperature poly-Si (LTPS) process. Characteristics of devices with different channel thicknesses and dimensions sare also studied, revealing that new devices with ultrathin channel are free from the floating body effect.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages531-534
Number of pages4
ISBN (Electronic)8890084782
DOIs
StatePublished - 1 Jan 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 24 Sep 200226 Sep 2002

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period24/09/0226/09/02

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