Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

K. W. Chen, Y. L. Wang*, C. P. Liu, Li Chang, F. Y. Li

*Corresponding author for this work

Research output: Contribution to journalConference article

20 Scopus citations

Abstract

The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-μm square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved.

Original languageEnglish
Pages (from-to)50-55
Number of pages6
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
StatePublished - 1 Mar 2006
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 12 Nov 200414 Nov 2004

Keywords

  • CMP
  • Copper
  • Copper slurry
  • Dishing

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