Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 2005|
|Event||2005 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 14 Jun 2005 → 14 Jun 2005