Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

C. H. Lai*, Albert Chin, K. C. Chiang, W. J. Yoo, C. F. Cheng, S. P. McAlister, C. C. Chi, P. Wu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations


Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.

Original languageEnglish
Article number1469271
Pages (from-to)210-211
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 14 Jun 200514 Jun 2005

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