Abstract
Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.
Original language | English |
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Article number | 1469271 |
Pages (from-to) | 210-211 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Volume | 2005 |
DOIs | |
State | Published - 1 Dec 2005 |
Event | 2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005 |