A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.
|Number of pages||2|
|State||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 IEEE Symposium on Low Power Electronics - San Diego, CA, USA|
Duration: 10 Oct 1994 → 12 Oct 1994
|Conference||Proceedings of the 1994 IEEE Symposium on Low Power Electronics|
|City||San Diego, CA, USA|
|Period||10/10/94 → 12/10/94|