Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

Fariborz Assaderaghi*, Stephen Parke, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

13 Scopus citations

Abstract

A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.

Original languageEnglish
Pages58-59
Number of pages2
StatePublished - 1 Dec 1994
EventProceedings of the 1994 IEEE Symposium on Low Power Electronics - San Diego, CA, USA
Duration: 10 Oct 199412 Oct 1994

Conference

ConferenceProceedings of the 1994 IEEE Symposium on Low Power Electronics
CitySan Diego, CA, USA
Period10/10/9412/10/94

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    Assaderaghi, F., Parke, S., Ko, P. K., & Hu, C-M. (1994). Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation. 58-59. Paper presented at Proceedings of the 1994 IEEE Symposium on Low Power Electronics, San Diego, CA, USA, .