The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm2 on p+ diffusion layer.
|Number of pages||4|
|State||Published - 1 Dec 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 22 Aug 1990 → 24 Aug 1990
|Conference||22nd International Conference on Solid State Devices and Materials|
|Period||22/08/90 → 24/08/90|