Novel selective platinum deposition on VLSI contact hole

J. B. Yeh*, C. Y. CHang, J. W. Chou, K. F. Huang, M. S. Feng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm2 on p+ diffusion layer.

Original languageEnglish
Pages227-230
Number of pages4
StatePublished - 1 Dec 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 22 Aug 199024 Aug 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period22/08/9024/08/90

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