Novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF2-implanted source/drain extension

Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao, Sheng Zhen Zhong, Wen Kuan Yeh, Tiao Yuan Huang

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A novel process flow employing a sacrificial tetraethyl orthosilicate/polycrystalline silicon (TEOS/poly-Si) gate stack is proposed for fabricating fluorine-enhanced-boron-penetration-free p-channel metal oxide semiconductor field effect transistors (p-MOSFET's) with shallow BF2-implanted source/drain (S/D) extension. With the presence of the sacrificial TEOS/poly-Si gate stack as the mask during the shallow BF2 implant, the incorporated fluorine atoms are trapped in the sacrificial TEOS top layer and can be subsequently removed. The new process thus offers a unique opportunity of achieving an ultra shallow S/D extension characteristic of the BF2 shallow implant, while not suffering from any fluorine-enhanced boron penetration normally accompanying the BF2 implant. Excellent transistor performance with improved gate oxide integrity has been successfully demonstrated on p-MOSFET's fabricated with the new process flow.

Original languageEnglish
Pages (from-to)381-383
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number8
DOIs
StatePublished - 1 Aug 2000

Fingerprint Dive into the research topics of 'Novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF<sub>2</sub>-implanted source/drain extension'. Together they form a unique fingerprint.

Cite this