Novel poly-silicon nanowire field effect transistor for biosensing application

Cheng Yun Hsiao, Chih Heng Lin, Cheng Hsiung Hung, Chun Jung Su, Yen Ren Lo, Cheng Che Lee, Horng-Chih Lin, Fu-Hsiang Ko, Tiao Yuan Huang, Yuh-Shyong Yang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

97 Scopus citations


A simple and low-cost method to fabricate poly-silicon nanowire field effect transistor (poly-Si NW FET) for biosensing application was demonstrated. The poly-silicon nanowire (poly-Si NW) channel was fabricated by employing the poly-silicon (poly-Si) sidewall spacer technique, which approach was comparable with current commercial semiconductor process and forsaken expensive E-beam lithography tools. The electronic properties of the poly-Si NW FET in aqueous solution were found to be similar to those of single-crystal silicon nanowire field effect transistors reported in the literature. A model biotin and avidin/streptavidin sensing system was used to demonstrate the biosensing capacity of poly-Si NW FET. The changes of ID-VG curves were consistent with an n-type FET affected by a nearby negatively (streptavidin) and positively (avidin) charged molecules, respectively. Specific electric changes were observed for streptavidin and avidin sensing when nanowire surface of poly-Si NW FET was modified with biotin and streptavidin at sub pM to nM range could be distinguished. With its excellent electric properties and the potential for mass commercial production, poly-Si NW FET can be a very useful transducer for a variety of biosensing applications.

Original languageEnglish
Pages (from-to)1223-1229
Number of pages7
JournalBiosensors and Bioelectronics
Issue number5
StatePublished - 1 Jan 2009


  • Biosensing
  • Nanowire field effect transistor
  • Semiconductor device

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