Abstract
Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.
Original language | English |
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Pages (from-to) | L1312-L1314 |
Journal | Japanese Journal of Applied Physics |
Volume | 32 |
Issue number | 9 |
DOIs | |
State | Published - 1 Jan 1993 |