Novel phenomenon of the al-1 wt%si contacts on the nf3/ar post-etching-treated n-si substrates

Huang-Chung Cheng; Yeong E. Chen; Miin Horng Juang; Huang Chung

doi:10.1143/JJAP.32.L1312

Novel phenomenon of the al-1 wt%si contacts on the nf3/ar post-etching-treated n-si substrates

Huang-Chung Cheng, Yeong E. Chen, Miin Horng Juang, Huang Chung

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.

Original language	English
Pages (from-to)	L1312-L1314
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.32.L1312
State	Published - 1 Jan 1993

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abstract = "Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.",

author = "Huang-Chung Cheng and Chen, {Yeong E.} and Juang, {Miin Horng} and Huang Chung",

year = "1993",

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T1 - Novel phenomenon of the al-1 wt%si contacts on the nf3/ar post-etching-treated n-si substrates

AU - Cheng, Huang-Chung

AU - Chen, Yeong E.

AU - Juang, Miin Horng

AU - Chung, Huang

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.

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