Abstract
Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.
| Original language | English |
|---|---|
| Pages (from-to) | L1312-L1314 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1 Jan 1993 |
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Cheng, H-C., Chen, Y. E., Juang, M. H., & Chung, H. (1993). Novel phenomenon of the al-1 wt%si contacts on the nf3/ar post-etching-treated n-si substrates. Japanese Journal of Applied Physics, 32(9), L1312-L1314. https://doi.org/10.1143/JJAP.32.L1312