Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Ming-Dou Ker*, Tain Shun Wu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

Original languageEnglish
Article number5552565
Pages (from-to)889-892
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 8 Dec 199611 Dec 1996

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