Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors

Bae Horng Chen, Jeng Hua Wet, Po Yuan Lo, Zing Way Pei, Tien-Sheng Chao*, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Depending on the chirality, single-walled carbon nanotubes (SWNTs) can be either metallic or semiconducting. Thus far, the production of SWNTs, irrespective of synthesis methods, still yields a mixture of both types, with the metallic type being prevalent. However, semiconducting-type SWNTs are needed for carbon nanotube field-effect transistors (CNT-FETs) as well as many sensors. This is because only the semiconducting-type SWNTs can be effectively modulated by the gate voltage. In contrast, the lack of field effect in metallic-type SWNTs adversely impacts their applications in high-performance electronic devices. In this study, we demonstrate for the first time a novel plasma treatment method that allows us to convert metallic-type carbon nanotubes to semiconducting-type CNT-FETs. On the basis of our experimental results, we believe that the ion bombardment during Ar plasma treatment attacks both metallic- and semiconducting-type nanotubes; however, the metallic-type carbon nanotubes are more vulnerable to the attack than those of the semiconducting type, and are subsequently transformed into the latter type.

Original languageEnglish
Pages (from-to)3680-3685
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
StatePublished - 25 Apr 2006

Keywords

  • Chirality
  • Ion bombardment
  • Metallic type
  • Semiconducting type
  • Single-walled carbon nanotubes (SWNTs)

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