Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization

Huang-Chung Cheng*, Fang Long Chang, Ming Jang Lin, C. C. Tsai, C. W. Liaw

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Low-temperature poly-Si lateral double-diffused metal oxide semiconductor (LTPS LDMOS) with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400°C substrate heating for the first time. The ON/OFF current ratios were 2.96 × 105 and 6.72 × 106 while operating at Vds = 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at Vds = 90 V and Vgs = 20 V. The Ron,sp with dimensions of W/Lch = 600 μm/12 μm could be significantly decreased 6.67 × 102 times in magnitude as compared with conventional offset drain thin-film-transistors.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number12
DOIs
StatePublished - 1 Dec 2004

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