Novel ion bombardment technique for doping limited Cu source in SiO x-based nonvolatile switching layer

Sheng Hsien Liu, Wen Luh Yang, Yu Hsien Lin, Chi Chang Wu, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


A novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiOx switching layer (SiOx Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB technique has many benefits, including a local-doping effect, room-temperature process, and compatibility with current IC manufacturing technology, besteading the 1T\hbox{-}1R integration. Through transmission electron microscopy and energy dispersive spectrometer analyses, an IB-induced SiOx:Cu SL is confirmed. In contrast with the conventional z{\rm Cu}/{\rm SiO} x-stacked sample, this IB-induced SiOx:Cu SL exhibits superior performance in terms of lower forming/RESET voltages, higher uniformity of SET/RESET voltages, and more stable high-temperature retention characteristics. Additionally, so far, this IB-induced TaN SiOx:Cu TaN device has shown the best switching endurance properties for the general SiOx-based Cu filament resistance random access memory.

Original languageEnglish
Article number6603277
Pages (from-to)1388-1390
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - 23 Sep 2013


  • Cu-doped SiO
  • ion bombardment (IB)
  • limited Cu source
  • resistance random access memory (ReRAM)

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