Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)

Joachim N. Burghartz, Andrew C. Megdanis, John D. Cressler, J. Y.C. Sun, Carol L. Stanis, James H. Comfort, Keith A. Jenkins, Frank Cardone

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

An in-situ doped polysilicon emitter process for very shallow and narrow emitter formation and minimum emitter resistance is presented. An in-situ doped film has been imbedded between two undoped poly spacer layers as a buried diffusion source (BDS) to reduce the emitter resistance and to form a high-quality poly/monosilicon interface. Transistors with an emitter area of 0.25 x 0.25 μm2 and with nearly ideal I- V characteristics were fabricated. A very high cutoff frequency of 53 GHz and a minimum ECL gate delay of 26 ps have been achieved using BDS-poly emitter transistors with an emitter area of 0.35 x 4.0 μm2.

Original languageEnglish
Pages (from-to)679-681
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number12
DOIs
StatePublished - Dec 1991

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