Novel implantation method to improve machine-model electrostatic discharge robustness of stacked N-channel metal-oxide semiconductors (NMOS) in sub-quarter-micron complementary metal-oxide semiconductors (CMOS) technology

Ming-Dou Ker*, Hsin Chyh Hsu, Jeng Jie Peng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

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Physics & Astronomy

Engineering & Materials Science