NOVEL HIGH-SPEED, 5-VOLT PROGRAMMING EPROM STRUCTURE WITH SOURCE-SIDE INJECTION.

A. T. Wu*, T. Y. Chan, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

49 Scopus citations

Abstract

A novel source-side injection EPROM (SIEPROM) structure capable of 5-V only, high-speed programming is described. The cell is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control region introduced close to the source. Under high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region is favorable for hot-electron injection into the floating gate. As a result, a programming speed of 10 mu s at a drain voltage of 5 V has been demonstrated. Also, a soft-write endurance time of 10 years with a read current larger than 100 mu A-per- mu m width can be readily achieved.

Original languageEnglish
Pages (from-to)584-587
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1986

Fingerprint Dive into the research topics of 'NOVEL HIGH-SPEED, 5-VOLT PROGRAMMING EPROM STRUCTURE WITH SOURCE-SIDE INJECTION.'. Together they form a unique fingerprint.

Cite this