A novel source-side injection EPROM (SIEPROM) structure capable of 5-V only, high-speed programming is described. The cell is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control region introduced close to the source. Under high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region is favorable for hot-electron injection into the floating gate. As a result, a programming speed of 10 mu s at a drain voltage of 5 V has been demonstrated. Also, a soft-write endurance time of 10 years with a read current larger than 100 mu A-per- mu m width can be readily achieved.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1986|