TY - JOUR
T1 - NOVEL HIGH-SPEED, 5-VOLT PROGRAMMING EPROM STRUCTURE WITH SOURCE-SIDE INJECTION.
AU - Wu, A. T.
AU - Chan, T. Y.
AU - Ko, P. K.
AU - Hu, Chen-Ming
PY - 1986/12/1
Y1 - 1986/12/1
N2 - A novel source-side injection EPROM (SIEPROM) structure capable of 5-V only, high-speed programming is described. The cell is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control region introduced close to the source. Under high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region is favorable for hot-electron injection into the floating gate. As a result, a programming speed of 10 mu s at a drain voltage of 5 V has been demonstrated. Also, a soft-write endurance time of 10 years with a read current larger than 100 mu A-per- mu m width can be readily achieved.
AB - A novel source-side injection EPROM (SIEPROM) structure capable of 5-V only, high-speed programming is described. The cell is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control region introduced close to the source. Under high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region is favorable for hot-electron injection into the floating gate. As a result, a programming speed of 10 mu s at a drain voltage of 5 V has been demonstrated. Also, a soft-write endurance time of 10 years with a read current larger than 100 mu A-per- mu m width can be readily achieved.
UR - http://www.scopus.com/inward/record.url?scp=0022985546&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1986.191257
DO - 10.1109/IEDM.1986.191257
M3 - Conference article
AN - SCOPUS:0022985546
SP - 584
EP - 587
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -